The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.
利用反射及
激
测能隙边缘的激子跃迁。
致发,激发The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.
利用反射及激测能隙边缘的激子跃迁。
III-V semiconductor,isoelectronic trap,photoluminescence,Raman scattering,Time-resolved photoluminescence,ordered and disordered structure.
族半导体,等电子陷阱,致发,
曼散射,时间分辨荧谱,有序结构,无序结构
声明：以上例
、词
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