Cathodoluminescence (CL) spectra show a strong band-edge emission around the V-shape pits.

阴极射线萤光光谱显示了很强发光强度在V形洞边缘发生。

This system has superior performance in image quality, space resolution , ?m and nm Cathodoluminescence image and spectrum analysis of semiconductor materials.

在图像质量、图像空间分辨、阴极荧光成像及光谱分析等方面具有优越性。