A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented.
摘要提出了一种基于二维器件模拟工艺外延型衬底电阻宏模型。
The hydrated silicon dioxide with three layers structure of micron-submicron-millimicron was observed through TEM.
过电镜实验,观察到水合二氧化硅具有纳三次结构。
The dynamic light scattering is an effective method to measure grain diameter in nanon and submicron.
动态光散射技术是测量纳及颗粒粒径有效方法。
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