rubrene

Moreover, we make the devices with double emitting zone by doping 1wt% DCJTB to verify the NPB: rubrene layer near the interface of NPB: rubrene/Alq3: rubrene was the dominant emitting zone.

而且我们利用DCJTB染料作为检测剂，确证了对于双发区梯度掺杂器件，在靠近NPB:rubrene/Alq3: rubrene 界面处的 NPB:rubrene 层是主要的发区的结论。

The mechanism of incomplete energy transfer and directly carriers capture by rubrene was existed in this WOLED simultaneously.

本文对rubrene单掺杂层的有机白器件的性能和发机理进行了研究。